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BFP620
NPN Silicon Germanium RF Transistor * High gain low noise RF transistor * Provides outstanding performance for a wide range of wireless applications * Ideal for CDMA and WLAN applications * Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz * Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz * Gold metallization for extra high reliability
ESD: Electrostatic discharge sensitive device, observe handling precaution!
3 4
2 1
VPS05605
Type BFP620
Maximum Ratings Parameter
Marking R2s 1=B
Pin Configuration 2=E 3=C 4=E
Symbol VCEO
Package SOT343
Value Unit
-
Collector-emitter voltage
TA > 0 C TA 0 C
V 2.3 2.1
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95C
VCES VCBO VEBO IC IB Ptot Tj TA T stg
7.5 7.5 1.2 80 3 185 150 -65 ... 150 -65 ... 150 mW C mA
Junction temperature Ambient temperature Storage temperature
1T is measured on the collector lead at the soldering point to the pcb S
Thermal Resistance Parameter Symbol RthJS Value 300 Unit
Junction - soldering point 1)
K/W
1
Apr-21-2004
BFP620
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 50 mA, VCE = 1.5 V, pulse measured
1For calculation of R thJA please refer to Application Note Thermal Resistance
Symbol min. V(BR)CEO ICES ICBO IEBO hFE 2.3 110
Values typ. 2.8 180 max. 10 100 3 270
Unit
V A nA A -
2
Apr-21-2004
BFP620
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 1.5 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Collector emitter capacitance VCE = 2 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Transducer gain IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 1.8 GHz IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 , f = 6 GHz Third order intercept point at output2) VCE = 2 V, I C = 50 mA, f = 1.8 GHz, ZS = ZL = 50 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS = ZL = 50 , f = 1.8 GHz
1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
Unit
-
65 0.12 0.22 0.46
0.2 -
GHz pF
Ccb Cce Ceb F
dB 0.7 1.3 21.5 dB
G ms
-
G ma
-
11
-
dB
|S21e|2 IP 3 20 9.5 25 -
dB
dBm
P-1dB
-
15
-
3
Apr-21-2004
BFP620
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 2 2.707 250.7 1.43 2.4 0.6 0.2 0.5 3 2 -0.0065 fA V V fF ps A V ns -
-
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = KF = TITF2
425 0.25 50 10 3.129 0.6 0.75 10 0 0.5 128.1 -1.42 0.8 7.291E-11 1.0E-5
A mA V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.025 21 1 18 1.522 2.364 0.3 1.5 124.9 1 0.52 1.078 298
fA pA mA V fF V eV K
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
RCBS
CBCC C B F P 6 2 0 _ C h ip S B E RCES
LCC
B
LBB
LBC
CBEC
RCCS
LCB
C
LEC
CBEI LEB CBEO T= 2 5 C CCEO
CCEI
Itf = 2 4 0 0 * ( 1 - 6 .5 e -3 * (T -2 5 ) + 1 .0 e -5 * (T -2 5 )^ 2 )
E
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
LBC = LCC = LEC = LBB = LCB = LEB = CBEC = CBCC = CES = CBS = CCS = CCEO = CBEO = CCEI = CBEI = RBS = RCS = RES =
60 50 15 764.5 725.4 259.6 98.4 55.9 140 54 50 106.5 106.7 132.4 99.6 1200 1200 300
pH pH pH pH pH pH fF fF fF fF fF fF fF fF fF
Valid up to 6GHz
4
Apr-21-2004
BFP620
Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p)
200
mW
10 3
160
K/W
RthJS
140
Ptot
120 100 80 60 40 20 0 0 120 C
10 2
D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
20
40
60
80
100
150
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
C
10
0
TS
tp
Permissible Pulse Load Ptotmax/P totDC = (tp)
10 1
Collector-base capacitance Ccb= (VCB) f = 1MHz
0.4
pF
Ptotmax/ PtotDC
0.3
CCB
-4 -3 -2
D=0 0.005 0,01 0,02 0,05 0,1 0,2 0,5
0.25
0.2
0.15
0.1
0.05 10 0 -7 10
10
-6
10
-5
10
10
10
C
10
0
0 0
1
2
3
4
5
V
7
tp
VCB
5
Apr-21-2004
BFP620
Third order Intercept Point IP3=(IC)
(Output, ZS=ZL=50)
Transition frequency fT= (IC) f = 1GHz VCE = Parameter in V
65 GHz 55 50 45
1 1.3 to 2.3
VCE = parameter, f = 900MHz 27
dBm 2.3V
21 18 15 12
0.8V
1.8V
IP3
1.3V
fT
40 35 30 25 20 15 10
0.3 0.5 0.8
9 6 3 0 0
5 10 20 30 40 50 60 70 80 mA 100 0 0 10 20 30 40 50 60 70 80 mA 100
IC
IC
Power gain Gma, Gms = (IC) VCE = 1.5V f = Parameter in GHz
30
dB 0.9
Power Gain Gma, Gms = (f),
|S21| = f (f)
VCE = 1.5V, I C = 50mA
55
dB
26 24 22
45 40
G
20 30 18 16 14 12 10 8 0 10 20 30 40 50 60 70 mA
2.4 3 4 5 6 Gms
G
1.8
35
25 20 15 10 5 0
GHz |S21| Gma
90
1
2
3
4
6
IC
f
6
Apr-21-2004
BFP620
Power gain Gma, Gms = (VCE) IC = 50mA f = Parameter in GHz
30
dB 1.8 0.9
20
2.4 3
G
15
4 5 6
10
5
0
-5 0.2
0.6
1
1.4
1.8
V
2.6
VCE
7
Apr-21-2004

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